(456b) Owens Corning Early Career Award Lecture: Organic Semiconductor-Incorporated Perovskites (OSiP) – a New Family of Hybrid Electronic Materials | AIChE

(456b) Owens Corning Early Career Award Lecture: Organic Semiconductor-Incorporated Perovskites (OSiP) – a New Family of Hybrid Electronic Materials

Authors 

Dou, L. - Presenter, Purdue University
Halide perovskites are exciting new semiconductors that show great promising in low cost and high-performance optoelectronics devices including solar cells, LEDs, photodetectors, lasers, etc. However, the poor stability is limiting their practical use. In this talk, I will present the development of a new family of stable organic-inorganic hybrid electronic materials, namely, Organic Semiconductor-Incorporated Perovskites (OSiP). Energy transfer and charge transfer between adjacent organic and inorganic layers are extremely fast and efficient, owing to the atomically-flat interface and ultra-small interlayer distance. Importantly, this rigid conjugated ligand design dramatically enhances materials’ chemical stability and suppresses solid-state ion migration and diffusion, making them promising for real-world applications. Based on this, we demonstrate for the first time an epitaxial halide perovskite heterostructure with near atomically-sharp interface, which pave the way for perovskite nanoelectronics and nanophotonics. Finally, using this stable and solution-processable OSiPs, we demonstrate the fabrication of high-quality thin films, which enable highly stable and efficient solar cells, LEDs, and transistors.

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