(650a) Monolithic Three-Dimensional (3D) Integration of Two-Dimensional (2D) Materials | AIChE

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(650a) Monolithic Three-Dimensional (3D) Integration of Two-Dimensional (2D) Materials

Authors 

Das, S. - Presenter, The Pennsylvania State University
The semiconductor industry is undergoing a significant transformation with the advancement of three-dimensional (3D) integration techniques, marking a departure from traditional two-dimensional scaling principles. This shift not only enhances device integration density, performance, and energy efficiency but also introduces new multifunctional capabilities, embodying the transition from “Moore's Law” to “More Moore” and “More than Moore” technologies. In this talk, I will present our recent studies on two-dimensional (2D) semiconductors in overcoming the limitations of silicon-based CMOS devices and 3D integration. Our key achievements include the wafer-scale monolithic integration of MoS2 and WSe2 field-effect transistors (FETs) into multi-tiered structures, achieving unprecedented device density and interconnect efficiencies. This innovation enables the creation of sophisticated, highly dense, and functionally diverse integrated circuits, paving the way for future semiconductor technologies that leverage material heterogeneity and monolithic 3D integration for enhanced computational, memory, and sensing capabilities.

Topics 

Materials

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