(650f) Light Activated De-Doping with High Spatial Resolution in Wafer Scale MoS2

2D materials have shown great potential in microelectronics and optoelectronics. However, a major challenge in commercializing these materials is the inability to effectively dope them at a wafer scale. Due to the atomic thinness of 2D materials these are very sensitive to ion beams making doping by ion implantation extremely challenging. While electrostatic gating can be used to effectively dope these materials and are ideal for studying fundamental physics, the device architecture is extremely complex and unsuitable for commercial applications. Avenues to dope these materials via molecular doping have also been explored but have provided limited success due the instability of these molecular dopants. We propose the use of interface chemistry and concomitant exposure to visible light (with energy above the bandgap of the TMDCs) for photodoping these materials. We shed light on the fundamental mechanism of the doping process. Additionally, we show the ability to achieve spatial control over the doping process by selectively exposing certain parts of the TMDCs to light of the appropriate wavelength. We further demonstrate the extension of this idea to pattern areas with different doping densities by selective exposure of certain parts of the sample to the laser. We anticipate that the scalability and ease of implementation of this approach will address one of the major issues preventing the “Lab to Fab” transition of 2D materials and facilitate its seamless integration for commercial applications.