(524f) Cvd Growth of Gallium Nitride Nanowire Using Patterned Substrates
AIChE Annual Meeting
2006
2006 Annual Meeting
Nanoscale Science and Engineering Forum
(22c) Nanowires I: Synthesis
Thursday, November 16, 2006 - 2:35pm to 3:00pm
Chemical vapor deposition (CVD) system was used to grow GaN nanowire based on the vapor-liquid-solid (VLS) mechanism. Nanoporous alumina templates and electron-beam lithography methods was used to pattern the substrate with the required catalyst necessary for the growth of the nanostructures. Different morphologies of GaN structure will also be presented.