(739e) Structure and Low Temperature Spectral Emissivity of Erbium Doped Metal Oxide Nanofibers for Application as Selective Emitters in Thermophotovoltaic Devices
AIChE Annual Meeting
2008
2008 Annual Meeting
Materials Engineering and Sciences Division
Nanomaterials for Photovoltaics
Friday, November 21, 2008 - 9:15am to 9:40am
A series of novel, thermally excited selective emitter material (e.g., Er2Ti2O7) for thermophotovoltaic (TPV) energy conversion is described in this work. The photovoltaic material's properties are very sensitive to the crystal structure and crystal field environment. The X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and Fourier transformation IR (FTIR) have been applied to investigate the crystal structure and optical properties of the selective emitter materials. It has been shown that different crystal structures were formed by controlling the annealing conditions. Both the crystal structure and host materials will affect emission properties of selective emitter materials. Lattice parameter, grain size and particle size distribution profiles have been investigated. Gaussian multipeak fitting module has been applied to analyze center peak bandwidth of Er3+ emission bands at 1.53μm. The experimental measurements show that power densities can be obtained up to 125 W/mole of Er, in the wavelength range between 1.3 and 1.7 μm, at temperature of 500oC. Excitation mechanisms of thermal induced Er3+ emission in polycrystalline metal oxide matrices have been proposed. Optimize surrounding environment of Er3+ ion will inhibit the non-radiative de-excitation of Er3+ and enhance energy transfer efficiency from matrices to 4f electrons of Er3+ ion. The emissive power spectrums of selective emitter materials are matched very efficiently to the response of GaSb and InGaAs photovoltaic cell in TPV devices.