Transport Phenomena In Electronic Materials Processing | AIChE

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Transport Phenomena In Electronic Materials Processing

Chair(s)

Ashurst, W. R., Auburn University

Co-chair(s)

Derby, J. J., University of Minnesota

Transport Phenomena in Electronic Materials Processing

Presentations

3:15 PM
(566a) Explanation for Benefits of Millisecond Annealing In Ultrashallow Junction Formation
3:35 PM
(566b) The Combined Role of Transport Phenomena and Interfacial Attachment Kinetics during Liquid Phase Epitaxy of Mercury Cadmium Telluride
3:55 PM
(566c) First Principles Determination of Highly Mobile Dopant-Interstitial Complexes and Their Relative Contribution to Dopant Diffusion In Silicon
4:15 PM
(566d) Computational Insights into the (Complex) Aggregation Physics of Self-Interstitials
4:35 PM
(566e) A Comprehensive Model for Coupled Oxide Precipitation and Point Defect Aggregation In Crystalline Silicon
4:55 PM
(566f) Optically Stimulated Diffusion In Ultrashallow Junction Formation
5:15 PM
(566g) Morphological Stability Analysis of Planar Crystalline Solid Surfaces Under the Simultaneous Action of Electric Fields and Mechanical Stresses

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