(527a) Growth of Unidirectional Indium Nitride (InN) Nanorods On Silicon Substrate Using Hydride Metal-Organic Vapor Phase Epitaxy

In recent years, lots of efforts have been directed towards growth of one dimensional (1D) electronic materials such as nanorods and nanowires. Indium nitride (InN) in particular has become material of great interest due to narrow direct bandgap (0.7-0.9 eV) as well as superior electron transport properties. InN is promising candidate for IR emitters, detectors as well as solar cell applications. There is also a lot of interest in integrating III-V technology to mature Si technology for ease in scale up as well as economic benefits. In this study, InN nanorods are grown by novel Hydride Metal Organic Vapor Phase Epitaxy (H-MOVPE) technique. Using H-MOVPE technique, InN nanorods (with 40nm -100nm diameter) are grown on Si(100) and Si(111) substrates at 560 °C to 600 °C. It was previously observed that intermediate GaN layer can assist vertical nanorod growth in case of Sapphire substrate. In this study, it has been demonstrated that use of GaN layer can help to produce almost vertically aligned nanorods in <0002> direction on silicon substrates as well. It has been observed that silicon substrate orientation has some effect on nanorod direction distribution. In addition, GaN layer growth mode (MOVPE or H-MOVPE), nitridation of substrate, nitridation temperature have also been observed to play important role in final InN naorods orientations. The near unidirectional growth of InN nanorods has been verified by techniques such as X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). InN nanorods have been further characterized by room temperature Photoluminescence (PL) for bandgap and Energy Dispersive Spectroscopy (EDS).