(228a) Synthesis of CuInS2 On Paper by Successive Ionic Layer Adsorption and Reaction

Synthesis
of CuInS₂ on Paper by Successive Ionic Layer Adsorption and
Reaction 

Yu-Wei
Su, Wei Wang, Seung-Yeol Han, Chih-hung Chang

Lei
Kerr

Successive ionic layer adsorption and reaction
(SILAR) technique was first reported by Y.F. Nicolau
in 1985. Numerous studies of using SILAR technique have been carried out since
then. The SILAR technique is based on sequential reactions at the surface by
alternate immersion of the substrate into cation and
anion precursor solutions. SILAR offers a simple and quick operation to grow a
variety of thin films from solution phase at room temperature and ambient
pressure. In principle, SILAR process resembles atomic layer deposition which
can control thin film growth precisely via a layer-by-layer growth process.
CuInS₂ is direct bandgap semiconductor
with a high absorption coefficient that is capable of absorbing a significant
fraction of the incident solar radiation. We will report our progress in the
synthesis of CuInS₂ on paper using SILAR technique.