(3as) Nano Materials for Microelectronics and Energy Sciences

Our research thrust aims at clarifying the mechanisms dictating the synthesis of size-, shape- and composition-controlled atom-sized systems for microelectronics and energy sciences. Our efforts bridge chemical and electrical engineering, materials science and physics. Nanofabrication techniques are pursued for applications involving the demonstration of memory spin-based devices that are scalable to their ultimate physical limits. Diverse routes undertaken to fabricate spin-transfer-torque random access memories (STT RAM) are presented. Monolayer assemblies of FePt nanostructures have been fabricated with different geometries, including nanorods, oval-shaped particles and spherical particles for rational control of their magnetic properties. Graphene transistors are also explored in order to realize low-power and high mobility devices. Large-area monolayer graphene films are grown by chemical vapor deposition, using C2H2 as precursor and Co films as catalyst. The number of graphene layers can be controlled by choosing an appropriate Co film thickness. Electrical transport measurements reveal mobility values that are comparable to graphene grown by CVD on other transition metals. Atomic layer deposition (ALD) is a key process for the microelectronics application studied by our group. Thin films of BeO and MgO are grown for devices involving III-V transistors and magnetic tunnel junctions, respectively. In addition to this, our research group endeavors will serve to answer critical issues in the design and development of low cost, highly efficient nanomaterials that can ease widespread use of clean energy technologies such as solar cells. The students of my research group will be skilled on the fabrication, characterization and application of inorganic nanomaterials to meet the research goals needed to ensure that viable fossil fuel alternatives are developed.