(193f) Effect of Oxygen Flow Rate On the Propeties of RF-Sputtered SnO2 Protective Layer and the Performance of DSSC | AIChE

(193f) Effect of Oxygen Flow Rate On the Propeties of RF-Sputtered SnO2 Protective Layer and the Performance of DSSC

Authors 

Lu, H. C. - Presenter, Chang Gung University



RF-sputtered tin oxide (SnO2) thin films were attempted to be used as the protection layers for the transparent conductive oxide (TCO) electrodes of dye-sensitized solar cells (DSSC). The effect of oxygen flow rate during the sputtering process on the properties of SnO2 thin films and the performance of DSSC were also investigated. Tin oxide thin films with rutile structure, high average visible transmittance (>85%), and moderately low resistivity (`10-1 Ωcm ) were obtained when deposited on glass substrates at 373 K. By acting as protection layers for the TCO electrodes, not only the changes in the electrical properties of the TCO electrodes during the fabrication process of DSSC could be suppressed, but the performance of the DSSC was also found to be enhanced.

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