(336e) Disorder Engineering to Enhance the Limited Quantum Capacitance of Graphene-Based Electrochemical Capacitors

Graphene-based materials have attracted considerable interest for electrochemical double layer capacitor applications due to their high specific surface area and electrical conductivity.  However, both experimental and theoretical calculations have demonstrated that the performance of these devices can be curtailed by the intrinsically limited quantum capacitance of graphene.  In this talk, we explore the influence of disorder (such as chemical impurities, topological point defects, edge defects, and functional groups) on the electronic structure of graphene, which subsequently affects the quantum capacitance, using density functional theory simulations.  We highlight the relative benefits of different types of disorder and briefly discuss their impact on the electric double layer capacitance.  We conclude with several design principles aimed toward tuning the electronic properties of these materials for enhanced performance in supercapacitors.