(488h) Controlled Synthesis of Graphene By Chemical Vapour Deposition

The controlled growth of graphene and other two-dimensional materials enables the integration of their exceptional electrical and mechanical properties for energy conversions and storage. We have demonstrated the use of multiple strategies to synthesize structure-controlled high quality two-dimensional materials and their heterostructures. In particular, we demonstrate the use of a backside carbon gettering (BCG) approach to control the lay thickness and uniformity of graphene. We have also experimentally demonstrates an edge-epitaxy growth, in which the film-edge/substrate interaction determines the orientation of the final film, distinct from conventional epitaxial growth, where the precise relationships between the film-terrace and substrate are required. By keeping a hydrogen-free atmosphere, we avoids the H termination on graphene edges and thus allow the intermediate graphene flakes to strongly bond to the underneath metal crystal, which consequently define their orientation.