(493a) High Surface Area Silicon Quantum Dots Derived from Porous Silicon for Energetic Materials | AIChE

(493a) High Surface Area Silicon Quantum Dots Derived from Porous Silicon for Energetic Materials

Authors 

Guerieri, P. M. - Presenter, Army Research Laboratory
Ervin, M., US Army Research Laboratory
Piekiel, N., US Army Research Laboratory
Adams, S., Army Research Laboratory
Churaman, W. A., Army Research Laboratory
Morris, C., US Army Research Laboratory
Energetic porous silicon has emerged in the last fifteen years as a uniquely positioned formulation class featuring the increased energy density of metal-based fuels relative to monomolecular explosives, yet with exceedingly high energy release rates (1-3000 m/s flame speeds). Thus far, porous silicon is “on-chip”, etched from a silicon wafer, and is therefore compatible with MEMS fabrication techniques and ideal for augmenting conventional electronics, creating small-scale thrust or actuation, and replacing explosive initiators. However, this same “on-chip” nature also limits potential applications and effectively dilutes the specific energy density when considering its inert substrate base. Efforts to expand the technology off-chip have led to our fabrication of hydrogen-terminated silicon quantum dots derived from porous silicon. This work characterizes the nominally 5 nm Si nanoparticles with specific surface areas over 500 m2/g with open-channel flame speeds similar to on-chip porous silicon propagation rates with NaClO4 oxidizer (exceeding 1 km/s). Continuing characterization and combustion performance evaluation efforts are summarized including microscopy, FTIR, bomb calorimetry, high-speed combustion videography, and effects of binders for additive manufacturing.

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