(115b) Atomic Layer Processing of Ferroelectric, Phase Change, and Threshold Switching Materials for Next Generation Nonvolatile Memory Devices

As the demand for faster, cheaper, lower power, and generally higher performance devices continues unabated toward the end of this decade and into the next, the integrated circuit industry is turning toward a diverse array of new functional materials. Non-volatile memory (NVM) in particular is driving the development of new non-linear, state-change elements such as ferroelectrics, resistive memory, and threshold switches. Atomic Layer Deposition (ALD) is one of the few processes that delivers both the conformality and compositional control required for these materials in NVM devices. In this talk we present recent developments of ALD ferroelectric HfO₂ thin films as well as threshold switching selector and phase change materials for NVM applications.