(158b) Controlled Synthesis of 2D Transition Metal Dichalcogenides for Electronic Nanosensors

Modern electronics and optoelectronics require large-scale growth of semiconducting thin films, which would benefit the development of high-performance ultrathin and flexible devices. Two-dimensional (2D) transition metal dichalcogenides (TMDs) provide ideal semiconducting materials with attractive electronic and photonic properties. Towards to route to their practical applications, the controlled growth of 2D TMDs with well-designed composition, layer number, size, and structure is prerequisite. In this talk, I will present our recent progress on the controlled growth of 2D TMDs by chemical vapor deposition (CVD). Bilayer TMDs with a 100% selectivity, a variety of TMD-based heterostructures, and large-area continuous monolayer TMD films are all successfully obtained. Beyond TMDs, ongoing research activities also focus on the controlled synthesis of 2D transition metal carbides, known as MXenes. An universal functionalization method based on hexagonal boron nitride (hBN) interlayers has been developed to promote the application of 2D semiconductors in electronic nanosensors for the detection of DNAs and organic pollutant molecules.