(316c) Alternative Approaches to Minimizing Loss Pathways in InP-Based Air-Bridge Cells | AIChE

(316c) Alternative Approaches to Minimizing Loss Pathways in InP-Based Air-Bridge Cells

Authors 

Burger, T., University of Michigan
Forrest, S., University of Michigan
Lenert, A., University of Michigan
Lim, J., University of Michigan
The use of selectively reflective photovoltaic cells in thermophotovoltaic energy systems enables the recovery of otherwise unusable low energy (out-of-band) photons, thereby increasing the power conversion efficiency of the technology. We recently developed a thin-film cell architecture with a nanoscale air cavity buried beneath the light-absorbing InGaAs layer [1]. This cell exhibits ~98.5% out-of-band (OOB) reflectance, enabling conversion efficiencies exceeding 32% under illumination by ~1450 K SiC emitter. To investigate the performance of this device at different emitter temperatures (or power densities), we characterize the cell under various conditions characteristic of high thermal load [2]. We also quantify the loss pathways (including but not limited to Ohmic losses, thermalization losses, non-radiative recombination and OOB losses) associated with varying emitter temperatures. In this work, we propose two distinct cell configurations that further leverage the unique air-bridge architecture to overcome several challenges associated with operation of TPV cells at varying temperatures. First among these configurations is a double airbridge tandem cell, which leverages the top and bottom Au grid lines to optically and electronically connect the sub cells, thereby eliminating the need for a conventional tunnel junction. This may help to mitigate some of the primary loss pathways, including Ohmic and thermalization losses. Finally, we describe an alternative approach to photon recuperation, in which a transparent cell allows transmission of unusable photons to a secondary emitter, thereby further eliminating the OOB loss characteristic of reflective cells [3]. Here, the use of the air-bridge architecture uniquely enables transfer of the thin-film epilayer to a transparent device substrate.

REFERENCE

[1] D. Fan, T. Burger, S. McSherry, B. Lee, A. Lenert, and S. R. Forrest, “Near-perfect photon utilization in an air-bridge thermophotovoltaic cell,” Nature, vol. 586, no. 7828, pp. 237–241, 2020, doi: 10.1038/s41586-020-2717-7.

[2] B. Roy-Layinde et al., “Sustaining efficiency at elevated power densities in InGaAs airbridge thermophotovoltaic cells,” Solar Energy Materials and Solar Cells, vol. 236, p. 111523, 2022, doi: https://doi.org/10.1016/j.solmat.2021.111523.

[3] T. Burger, B. Roy-Layinde, R. Lentz, Z. J. Berquist, S. R. Forrest, and A. Lenert, “Semitransparent thermophotovoltaics for efficient utilization of moderate temperature thermal radiation,” Proceedings of the National Academy of Sciences, vol. 119, no. 48, p. e2215977119, 2022, doi: 10.1073/pnas.2215977119.