(668g) Molecular Additives Steer Selectivity of CO2 Photoelectrochemical Reduction over Gold Nanoparticles on Gallium Nitride
AIChE Annual Meeting
2023
2023 AIChE Annual Meeting
Catalysis and Reaction Engineering Division
Electrocatalysis & Photocatalysis V: Photoelectrocatalysis and Photocatalysis
Wednesday, November 8, 2023 - 10:00am to 10:20am
p-GaN is a wide bandgap semiconductor with good stability under CO2 PEC conditions due to the nitrogen rich surface. Additionally, its conduction band minimum is more negative than the CO2 reduction potential. When combined with metals, such as gold nanoparticles, the semiconductor-metal interface forms a Schottky barrier. Because of the downward bending of the conduction and valence bands, electrons excited in p-GaN are pushed towards the metal-electrolyte interface, while the holes are transferred into the bulk of the semiconductor. First, by synthesizing gold nanoparticles with controlled properties (size, optical absorption, Schottky barrier height), we study the effects of these parameters on the performance of the Au/p-GaN devices to identify catalytically active sites. Second, by functionalizing the surface of these devices with molecular additives, we steer selectivity of the CO2 reduction process toward carbon products. Overall, our work establishes a rigorous platform to elucidate structure-property relationships in photoelectrocatalysts and engineer active, stable, and selective materials for sustainable energy applications.