(79e) Two-Dimensional Molybdenum Disulfide Based Field Effect Transistor Sensor for Pfas Detection in Water
AIChE Annual Meeting
2023
2023 AIChE Annual Meeting
Environmental Division
Advanced Treatment Technologies for Water I
Wednesday, November 8, 2023 - 1:46pm to 2:05pm
Here, we report a novel field effect transistor (FET) based on two-dimensional (2D) molybdenum disulfide (MoS2) for PFAS detection in water. High-density MoS2 flakes were synthesized by chemical vapor deposition and transferred on the channel areas between source-drain electrodes. Then, a hexagonal boron nitride (h-BN) film was transferred to the MoS2 layer as an encapsulation layer to improve stability by preventing chemical degradation upon exposure to air or water. A pyrene-based linker molecule was used to bond PFAS molecules to the FET channel area, assisted by the hBN films. The PFAS FET sensor can be fabricated by functionalizing the channel area with PFAS specified molecular imprinting polymer (MIP) probe molecules for selective detection. It was observed that adding a pyrene-based linker produces an n-type doping effect by increasing the electron concentration in the channel, which increases the electrical conductivity. Finally, the performance of the device was characterized by measuring the changes in electrical conductivity of the MoS2 channel with different concentrations of PFAS molecules. Our results demonstrate that the FET sensor exhibits a linear response to PFAS in the ppb to ppt concentration range, with a high sensitivity of <0.01 ppb and good selectivity. This work provides an essential advancement in developing next-generation electronic sensors, which can be a cost-effective, rapid, and sensitive detection tool for in-situ PFAS monitoring in water.