(531d) Resonant Quantum Tunneling In Carbon-Nanotube-Based Devices | AIChE

(531d) Resonant Quantum Tunneling In Carbon-Nanotube-Based Devices



This work discusses CNT-based electronic devices by using the resonant quantum tunneling in double-barrier quantum-well structures. This quantum model and numerical results demonstrate how the CNT diameter, quantum well width, barrier height, and barrier thickness affect the transmission probability through the double-barrier resonant tunneling structure. The energy of tunneling electrons needs to match with one of the resonant energies existed in the resonant tunneling quantum well in order to achieve sharp resonance and high transmission probability, which ideally approaches to unity. The number and the energy levels of resonant energy states can be affected and tuned by the CNT-based quantum structure. These results can be used to further explore applications such as in resonant tunneling diodes.

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