(531d) Resonant Quantum Tunneling In Carbon-Nanotube-Based Devices
AIChE Annual Meeting
2011
2011 Annual Meeting
Materials Engineering and Sciences Division
Graphene and Carbon Nanotube Based Devices
Wednesday, October 19, 2011 - 1:30pm to 1:50pm
This work discusses CNT-based electronic devices by using the resonant quantum tunneling in double-barrier quantum-well structures. This quantum model and numerical results demonstrate how the CNT diameter, quantum well width, barrier height, and barrier thickness affect the transmission probability through the double-barrier resonant tunneling structure. The energy of tunneling electrons needs to match with one of the resonant energies existed in the resonant tunneling quantum well in order to achieve sharp resonance and high transmission probability, which ideally approaches to unity. The number and the energy levels of resonant energy states can be affected and tuned by the CNT-based quantum structure. These results can be used to further explore applications such as in resonant tunneling diodes.