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Archived Webinar Want to be an Entrepreneur? Personal Stories From Three Successful Entrepreneurs Who Have Traveled This Path.
Atashi Mukhopadhyay Citation name Mukhopadhyay, A. Affiliation Stanford University State CA Country USA Authored(449c) The Electronic Structure of Metals on High-K Dielectrics; Metal Induced Gap States for the Ru and Ruo2 on Hfo2 InterfacesAtashi MukhopadhyayJavier Fdez. Sanz2006 Annual Meeting (383f) Ab Initio Phase Diagrams for Water Adsorbed on Monoclinic Hfo2Atashi MukhopadhyayJavier Fdez. Sanz2006 Annual Meeting (685b) Quantum Molecular Dynamics Simulations of the Ald of Hfo2Atashi MukhopadhyayJavier Fdez. Sanz2006 Annual Meeting (45c) Prediction of Reaction Kinetics in Ald of Metal Oxides and NitridesYe XuAtashi Mukhopadhyay2006 Annual Meeting (646g) The Role of Dative Bonding in the Reactivity of Semiconductor and Metal Oxide SurfacesYuniarto WidjajaCollin MuiAtashi Mukhopadhyay2006 Annual Meeting (456a) First Priniciples Calculation Of Atomic Layer Deposition Of HfO2Atashi MukhopadhyayJavier Fdez. SanzCharles Musgrave2007 Annual Meeting (486g) Modeling Of HfO2/Ru InterfacesAtashi MukhopadhyayJavier Fdez. SanzCharles Musgrave2007 Annual Meeting (456d) Quantum Molecular Dynamics Simulations Of The Ald Of HfO2Charles MusgraveAtashi MukhopadhyayJavier Sanz2007 Annual Meeting (566c) Chemical Mechanisms of Contamination in Atomic Layer Deposition of Hfo¬2Atashi Mukhopadhyay2005 Annual Meeting Associated proceedings 2006 Annual Meeting 2007 Annual Meeting 2005 Annual Meeting
